Semiconductor memory devices

ABSTRACT

Semiconductor memory devices are provided. A semiconductor memory device includes an isolation layer in a first trench and a first gate electrode portion on the isolation layer. The semiconductor memory device includes a second gate electrode portion in a second trench. In some embodiments, the second gate electrode portion is wider, in a direction, than the first gate electrode portion. Moreover, in some embodiments, an upper region of the second trench is spaced apart from the first trench by a greater distance, in the direction, than a lower region of the second trench. Related methods of forming semiconductor memory devices are also provided.

CROSS-REFERENCE TO RELATED APPLICATIONS

This U.S. non-provisional patent application claims priority under 35U.S.C. § 119 to Korean Patent Application No. 10-2017-0101835, filed onAug. 10, 2017, in the Korean Intellectual Property Office, the entirecontents of which are hereby incorporated herein by reference.

BACKGROUND

The present disclosure relates to semiconductor memory devices. Due totheir small-size, multifunctional, and/or low-cost characteristics,semiconductor devices are considered important elements in theelectronics industry. Higher integration of semiconductor devices, suchas semiconductor memory devices, may be beneficial to satisfy consumerdemands for superior performance and inexpensive prices. In the case ofsemiconductor memory devices, increased integration may be especiallybeneficial, because their integration may be an important factor indetermining product prices. However, the extremely expensive processequipment used to increase pattern fineness may set a practicallimitation on increasing integration for semiconductor memory devices.To overcome such a limitation, a variety of studies on new technologyfor increasing integration density of a semiconductor device have beenconducted.

SUMMARY

Some embodiments of the inventive concepts provide a semiconductormemory device with increased integration density and improved electriccharacteristics and a method of fabricating the same.

According to some embodiments of the inventive concepts, a semiconductormemory device may include a substrate. The semiconductor memory devicemay include a device isolation layer defining active regions of thesubstrate. The semiconductor memory device may include a gate linestructure including a gate insulating layer and a gate electrode thatare buried in a trench of the substrate to cross the active regions. Thetrench may include first trench portions on the device isolation layerand second trench portions on the active regions. Moreover, in thesecond trench portions, the gate insulating layer may overlap a topsurface of the gate electrode.

According to some embodiments of the inventive concepts, a semiconductormemory device may include a substrate. The semiconductor memory devicemay include a device isolation layer defining active regions of thesubstrate. The semiconductor memory device may include a gate linestructure buried in a trench in the substrate to cross the activeregions. The gate line structure may include a gate insulating layer anda gate electrode in the trench. The gate electrode may include firstelectrode portions on the device isolation layer and second electrodeportions on the active regions. Moreover, the second electrode portionsmay be wider than the first electrode portions.

According to some embodiments of the inventive concepts, a method offorming a semiconductor memory device includes forming a deviceisolation layer in a substrate to define active regions. The method mayinclude forming a trench to cross the active regions. The trench mayinclude first trench portions exposing the device isolation layer andsecond trench portions exposing the active regions. Moreover, the methodmay include sequentially forming a gate insulating layer and a gateelectrode layer in the trench. Each of the second trench portions mayinclude an upper trench and a lower trench that is wider than the uppertrench. The sequentially forming may include forming the gate insulatinglayer in the upper trench to define gate regions in the lower trench.The sequentially forming may further include forming the gate electrodelayer in the gate regions through the first trench portions.

A semiconductor memory device, according to some embodiments of theinventive concepts, may include a substrate including first and secondtrenches therein. The semiconductor memory device may include anisolation layer in the first trench. The semiconductor memory device mayinclude a first gate electrode portion in the isolation layer in thefirst trench. Moreover, the semiconductor memory device may include asecond gate electrode portion in the second trench. The second trenchmay be free of the isolation layer. The second gate electrode portionmay be wider, in a direction, than the first gate electrode portion. Anupper region of the second trench may be spaced apart from the firsttrench by a greater distance, in the direction, than a lower region ofthe second trench.

BRIEF DESCRIPTION OF THE DRAWINGS

Example embodiments will be more clearly understood from the followingbrief description taken in conjunction with the accompanying drawings.The accompanying drawings represent non-limiting, example embodiments asdescribed herein.

FIG. 1 is a plan view of a semiconductor memory device according to someembodiments of the inventive concepts.

FIG. 2 is a sectional view illustrating cross-sections taken along linesA-A′ and B-B′ of FIG. 1.

FIGS. 3 to 11 are sectional views, which are provided to describe amethod of fabricating a semiconductor memory device according to someembodiments of the inventive concepts, and each of which illustratescross-sections taken along lines A-A′ and B-B′ of FIG. 1.

FIG. 12 is a sectional view illustrating a semiconductor memory deviceaccording to some embodiments of the inventive concepts.

FIGS. 13 to 16 are sectional views illustrating a semiconductor memorydevice and a method of fabricating the same, according to someembodiments of the inventive concepts.

FIGS. 17 to 19 are sectional views illustrating a semiconductor memorydevice and a method of fabricating the same, according to someembodiments of the inventive concepts.

FIGS. 20 to 22 are sectional views illustrating a semiconductor memorydevice and a method of fabricating the same, according to someembodiments of the inventive concepts.

It should be noted that these figures are intended to illustrate thegeneral characteristics of methods, structure and/or materials utilizedin certain example embodiments and to supplement the written descriptionprovided below. These drawings are not, however, to scale and may notprecisely reflect the precise structural or performance characteristicsof any given embodiment, and should not be interpreted as defining orlimiting the range of values or properties encompassed by exampleembodiments. For example, the relative thicknesses and positioning ofmolecules, layers, regions and/or structural elements may be reduced orexaggerated for clarity. The use of similar or identical referencenumbers in the various drawings is intended to indicate the presence ofa similar or identical element or feature.

DETAILED DESCRIPTION

FIG. 1 is a plan view of a semiconductor memory device according to someembodiments of the inventive concepts. FIG. 2 is a sectional viewillustrating cross-sections taken along lines A-A′ and B-B′ of FIG. 1.

Referring to FIGS. 1 and 2, a substrate 100 may be provided to haveactive regions AR defined by a device isolation layer 110. For example,the substrate 100 may be a silicon wafer. The device isolation layer 110may be formed of or include silicon oxide. The active regions AR may bespaced apart from each other in a horizontal direction, and each of theactive regions AR may be a bar-shaped pattern extending in a thirddirection D3. A top surface of the substrate 100 may be parallel to afirst direction D1 and a second direction D2, and the third direction D3may intersect, but not be perpendicular to, both of the first and seconddirections D1, D2.

A plurality of trenches TR may be provided in an upper region of thesubstrate 100, and gate line structures may be provided in the trenchesTR to cross the active regions AR. As used herein, the term “gate linestructure” may refer to a structure that includes a gate insulatinglayer 120 and a gate electrode GE (FIG. 2). The trenches TR may bespaced apart from each other in the second direction D2. As an example,each of the active regions AR may be provided to cross a pair of thetrenches TR. Each of the trenches TR may extend in the first directionD1 to alternately cross the device isolation layer 110 and the activeregions AR. Hereinafter, some embodiments of the inventive concepts willbe described with reference to one of the trenches TR.

As an example, the trench TR may include first trench portions T1″ on/inthe device isolation layer 110 and second trench portions T2″ on/in theactive regions AR. The second trench portions T2″ may be free of (i.e.,may not include therein) the device isolation layer 110. The firsttrench portions T1″ and the second trench portions T2″ may bealternately arranged in the first direction D1. When measured in thethird direction D3, the first trench portions T1″ may have a width W2larger than a width W3 of the second trench portions T2″. As an example,the width W2 of the first trench portions T1″ may be larger by about 10%to 90% than the width W3 of the second trench portions T2″. The widthsW2 and W3 may refer to upper (e.g., uppermost) widths of the trenchportions T1″ and T2″.

The first trench portions T1″ may include a first region R1 having alarge width and a second region R2 having a small width in the firstdirection D1, as shown in FIG. 1. When measured in the first directionD1, the width of the first region R1 may be about 2-10 times that of thesecond region R2. The first region R1 and the second region R2 may bealternately arranged in the first direction D1. The second trenchportions T2″ may be provided between ones of the first region R1 and thesecond region R2 that are adjacent to each other. In other words, thefirst region R1, the second trench portions T2″, the second region R2,and the second trench portions T2″ may be sequentially arranged in thefirst direction D1 in the enumerated order.

The first trench portions T1″ may have bottom surfaces lower than thoseof the second trench portions T2″. As an example, the bottom surfaces ofthe first trench portions T1″ may be lower by about 150 Å to about 550 Åthan those of the second trench portions T2″. Each of the second trenchportions T2″ may include an upper trench UT, which is provided to have arelatively small width, and a lower trench BT, which is extended fromthe upper trench UT and has a width larger than that of the upper trenchUT. The second trench portions T2″ (e.g., the lower trench BT thereof)may include an expanded region EN2, which is extended from the uppertrench UT and is expanded in horizontal and/or vertical directions tohave a width larger than the upper trench UT. The expanded region EN2 isillustrated to have a vertical length larger than a horizontal length orto have an ellipse shape, but the inventive concepts are not limitedthereto. For example, in some embodiments, the shape of the expandedregion EN2 may be variously changed.

A gate insulating layer 120 may be provided in the trench TR. In thefirst trench portions T1″, the gate insulating layer 120 may be providedto conformally cover side and bottom surfaces of the first trenchportions T1″. In the second trench portions T2″, the gate insulatinglayer 120 may be provided to fill the upper trench UT and thereby todefine empty spaces (hereinafter, gate regions GR) in the lower trenchBT. Each of the gate regions GR may have a top portion closed by thegate insulating layer 120 and may be connected to ones of the firsttrench portions T1″ that are horizontally located adjacent thereto. Thegate insulating layer 120 may be formed of or include at least one ofsilicon oxide, silicon nitride, or silicon oxynitride. As an example,the gate insulating layer 120 may be a silicon oxide layer.

A gate electrode GE may be provided on the gate insulating layer 120.The gate electrode GE may include a barrier electrode layer 131 and ametal electrode layer 136. The barrier electrode layer 131 may be formedof or include at least one of conductive metal nitrides (e.g., tantalumnitride (TaN), titanium nitride (TiN), or tungsten nitride (WN)). Themetal electrode layer 136 may be a metal layer (e.g., of tungsten (W),titanium (Ti), or tantalum (Ta)). The gate electrode GE may includefirst electrode portions GE1 in the first trench portions T1″ and secondelectrode portions GE2 in the second trench portions T2″.

The first electrode portions GE1 may be provided in lower portions ofthe first trench portions T1″, and top surfaces of the first electrodeportions GE1 may be overlapped (e.g., covered) with capping insulatingpatterns 141 occupying upper regions of the first trench portions T1″.The second electrode portions GE2 may be provided to fill the gateregions GR of the second trench portions T2″. Top surfaces of the secondelectrode portions GE2 may be overlapped (e.g., covered) with the gateinsulating layer 120 filling the upper trench UT. Due to roundedsurfaces of the gate regions GR, the top surfaces of the secondelectrode portions GE2 may also have a rounded shape. In someembodiments, each of the first electrode portions GE1 may have asubstantially flat top surface.

At upper regions of the first electrode portions GE1, the barrierelectrode layer 131 may expose a top surface of the metal electrodelayer 136. The capping insulating patterns 141 may be connected to theexposed top surface of the metal electrode layer 136. In someembodiments, at upper regions of the second electrode portions GE2, themetal electrode layer 136 may be overlapped (e.g., covered) with thebarrier electrode layer 131. In other words, the top surface of themetal electrode layer 136 may be spaced apart from the gate insulatinglayer 120 with the barrier electrode layer 131 interposed therebetween.As an example, in the second electrode portions GE2, the barrierelectrode layer 131 may have a ring-shaped section, and in the firstelectrode portions GE1, the barrier electrode layer 131 may have a‘U’-shaped section.

The second electrode portions GE2 may include protruding portions PP,which protrude in a direction from top surfaces of the first electrodeportions GE1 toward a top surface of the substrate 100. That is, topsurfaces of the second electrode portions GE2 may be higher by a heighth than those of the first electrode portions GE1. In some embodiments,the height h may be greater than a thickness of the gate insulatinglayer 120. In some embodiments, the height h may range from about 100 Åto about 500 Å.

When measured in the third direction D3, a width d2 of the secondelectrode portions GE2 may be larger than a width d1 of the firstelectrode portions GE1. For example, the width d2 of the secondelectrode portions GE2 may be about 1.1 to 3 times the width d1 of thefirst electrode portions GE1. Bottom surfaces of the first electrodeportions GE1 may be lower than those of the second electrode portionsGE2.

A spacer 115 may be provided between a side surface of the trench TR andthe gate insulating layer 120. In the first trench portions T1″, thespacer 115 may be provided along side surfaces of the first electrodeportions GE1. That is, in the first trench portions T1″, the spacer 115may be horizontally spaced apart from the first electrode portions GE1by the gate insulating layer 120. In the second trench portions T2″, abottom surface of the spacer 115 may be vertically spaced apart frombottom surfaces of the second electrode portions GE2 by the gateinsulating layer 120. The spacer 115 may be provided on a side surfaceof the upper trench UT and may not be extended to the lower trench BT.In some embodiments, the spacer 115 may be formed of or include at leastone of silicon oxide, silicon oxynitride, or silicon nitride.

The capping insulating patterns 141 may be provided on the deviceisolation layers 110 and may not be provided on the active regions AR.The upper trenches UT of the second trench portions T2″ may be occupiedby the gate insulating layer 120, and the capping insulating patterns141 may not be provided in the upper trenches UT. Accordingly, theactive regions AR may be free of the capping insulating patterns 141.The capping insulating patterns 141 may include first capping insulatingpatterns 141 a on the first regions R1 and second capping insulatingpatterns 141 b on the second regions R2. When measured in the firstdirection D1, widths of the first capping insulating patterns 141 a maybe larger than those of the second capping insulating patterns 141 b.The capping insulating patterns 141 may be formed of or include siliconnitride or silicon oxynitride.

First impurity regions 171 and second impurity regions 172 may beprovided in the active regions AR. The first impurity regions 171 andthe second impurity regions 172 may be spaced apart from each other withthe trenches TR interposed therebetween. As an example, the firstimpurity regions 171 may be provided in both/opposing end portions ofeach of the active regions AR, and the second impurity region 172 may beprovided between a pair of the first impurity regions 171. The impurityregions 171 and 172 may be doped to have a conductivity type differentfrom that of the substrate 100.

Bit lines BL and data storages (e.g., data storage elements/structures)DS may be formed on the gate line structures. For convenience inillustration, the bit lines BL and the data storages DS may be partlyillustrated in FIG. 1. The bit lines BL may extend in the seconddirection D2 and may be connected to a plurality of the second impurityregions 172 through first contacts 161. The data storages DS may beconnected to the first impurity regions 171 through second contacts 163.Each of the bit lines BL and the first and second contacts 161 and 163may be formed of or include at least one of metals, conductive metalnitrides, or semiconductor materials.

In the case where the memory device is a DRAM device, each of the datastorages DS may be a capacitor including a lower electrode, a dielectriclayer, and an upper electrode. In some embodiments, each data storage DSmay include a phase-change layer, a variable-resistance layer, or amagnetic tunnel junction layer. An interlayer insulating layer 195 maybe provided to overlap (e.g., cover) the data storages DS. In someembodiments, the interlayer insulating layer 195 may be formed of orinclude silicon oxide.

According to some embodiments of the inventive concepts, shapes,heights, and widths of the first and second electrode portions GE1 andGE2 may be variously changed. In some embodiments, each of the secondelectrode portions GE2 may be used as an access word-line for applying avoltage to the active regions AR. In some embodiments, the firstelectrode portions GE1 may be regions, which are buried in the deviceisolation layer 110 and are used as a passing word-line, and may not beused to directly apply a voltage to the active regions AR.

To increase an integration density of a semiconductor device, a width ofa gate electrode may be reduced. However, to allow a transistor to havedesired electric characteristics, it may be advantageous/necessary tomaintain a thickness of a gate insulating layer within a specificthickness range. In addition, reduction in width of a gate electrode maylead to an increase in electrical resistance of the gate electrode, andthus, it may be difficult to reduce a size of the gate electrode. Insome embodiments, the second electrode portions GE2 for applying avoltage to the active regions AR may be formed to have a width (e.g., inthe third direction D3) larger than a width of the first electrodeportions GE1 buried in the device isolation layer 110, and this may makeit possible to secure an integration density of a semiconductor deviceand electric characteristics of transistors. Furthermore, widths of theactive regions AR (in particular, the first and second impurity regions171 and 172) between the gate electrodes may be increased, and thus, acurrent passing therethrough may also be increased.

In the case where the first electrode portions GE1 are relatively closeto the first impurity region 171, a leakage current of a semiconductordevice may be increased. In some embodiments, the first electrodeportions GE1 may be formed to have top surfaces lower than those of thesecond electrode portions GE2, and this may make it possible to reduce aleakage current and thus to improve electric characteristics of asemiconductor device.

FIGS. 3 to 11 are sectional views, which are provided to describe amethod of fabricating a semiconductor memory device according to someembodiments of the inventive concepts, and each of which illustratecross-sections taken along lines A-A′ and B-B′ of FIG. 1.

Referring to FIGS. 1 and 3, a device isolation layer 110 may be formedin a substrate 100 to define active regions AR. The device isolationlayer 110 may be formed of or include, for example, silicon oxide. Anetching process may be performed on an upper portion of the substrate100 to form preliminary trenches PTR crossing the active regions AR orextending in the first direction D1. Each of the preliminary trenchesPTR, which are formed by the etching process, may have aposition-dependent depth. For example, the preliminary trench PTR mayinclude first trench portions T1 exposing the device isolation layer 110and second trench portions T2 exposing the active regions AR. The firsttrench portions T1 may be formed in the substrate 100 to have a depthlarger (i.e., deeper) than the second trench portions T2. When measuredin the third direction D3, a first width W1 of the first trench portionsT1 may be equal to a width W3 of the second trench portions T2, but insome embodiments, the first width W1 may be larger than the width W3 ofthe second trench portions T2. The etching process may be or include adry etching process.

Referring to FIGS. 1 and 4, a selective etching process may be performedon the device isolation layer 110 defining the first trench portions T1to form first trench portions T1′ having an expanded structure. As anexample, the selective etching process may be performed using an etchrecipe capable of etching the device isolation layer 110 whilesuppressing the etching of the active region AR. When measured in thethird direction D3, the first trench portions T1′ may have a secondwidth W2 larger than the first width W1 (and larger than the third widthW3). The depth of the first trench portions T1′ may also be increased.By contrast, the width W3 and depth of the second trench portions T2 maynot be increased or may be increased at a relatively low rate.

Referring to FIGS. 1 and 5, spacers 115 may be formed on inner sidewallsof the preliminary trenches PTR. The formation of the spacers 115 mayinclude forming a spacer layer to cover the preliminary trenches PTR andperforming an anisotropic etching process on the spacer layer. In someembodiments, the spacers 115 may be formed of or include at least one ofsilicon oxide, silicon oxynitride, or silicon nitride.

The device isolation layer 110 exposed by the spacers 115 may be furtheretched, and as a result, the first trench portions T1′ having anincreased depth (hereinafter, first trench portions T1″) may be formed.The etching of the device isolation layer 110 may be performed during ordirectly after the formation of the spacers 115.

Referring to FIGS. 1 and 6, first expanded regions EN1 may be formed byetching portions of the active region AR exposed by the spacers 115 orlocated below the second trench portions T2. Hereinafter, the secondtrench portions T2′ will be described to include the first expandedregions EN1. The formation of the first expanded regions EN1 may includeperforming an isotropic etching process on the active region AR exposedby the spacers 115. The first expanded regions EN1 may be formed by anetching process using an etching solution containing phosphoric acid orhydrofluoric acid. As shown, the first expanded regions EN1 may have acircular section, but the inventive concepts are not limited thereto.During the formation of the first expanded regions EN1, the deviceisolation layer 110 exposed by the first trench portions T1″ may not beetched or may be etched at a relatively low rate.

Referring to FIGS. 1 and 7, the first expanded regions EN1 may beexpanded to form second expanded regions EN2. The second expandedregions EN2 may have a vertically extended shape, compared with thefirst expanded regions EN1. For example, the second expanded regions EN2may have an elliptical section whose lateral width is smaller than itsvertical width, but the inventive concepts are not limited thereto. Thesecond expanded regions EN2 may be formed by performing an additionalanisotropic etching process on the active region AR. As an example, theanisotropic etching process may be a dry etching process. Hereinafter,the second trench portions T2″ will be described to include the thesecond expanded regions EN2. In addition, the trenches TR will bedescribed to include the first trench portions T1″ and the second trenchportions T2″. The processes, which have been described with reference toFIGS. 6 and 7, may be exchanged with each other in terms of the processorder. In other words, the anisotropic etching process may be followedby the isotropic etching process.

Referring to FIGS. 1 and 8, a gate insulating layer 120 may be formed onthe resulting structure provided with the trenches TR. In the firsttrench portions T1″, the gate insulating layer 120 may be formed toconformally cover side surfaces of the spacers 115 and a top surface ofthe device isolation layer 110. As an example, in the first trenchportions T1″, the gate insulating layer 120 may have a ‘U’-shapedsection.

The second trench portions T2″ may include an upper trench having afirst width and a lower trench (i.e., the second expanded region EN2)having a second width larger than the first width. The gate insulatinglayer 120 may be formed to fill the upper trench, and thus, gate regionsGR may be formed in the lower trenches (i.e., the second expandedregions EN2). Each of the gate regions GR may have a top portion closedby the gate insulating layer 120 and may be connected to ones of thefirst trench portions T1″ that are horizontally located adjacentthereto. The gate insulating layer 120 may be formed of or include atleast one of silicon oxide, silicon nitride, or silicon oxynitride. Asan example, the gate insulating layer 120 may be a silicon oxide layer.The gate insulating layer 120 may be formed by a chemical vapordeposition (CVD) or an atomic layer deposition (ALD).

Referring to FIGS. 1 and 9, gate electrode layers may be formed in thetrenches TR. For example, the gate electrode layers may include abarrier electrode layer 131 and a metal electrode layer 136 sequentiallyformed on the gate insulating layer 120. The barrier electrode layer 131may be formed of or include at least one of conductive metal nitrides(e.g., TaN, TiN, or WN). The metal electrode layer 136 may be a metallayer (e.g., of W, Ti, or Ta). The gate electrode layers may be formedusing at least one of a chemical vapor deposition (CVD), a physicalvapor deposition (PVD), or an atomic layer deposition (ALD).

The gate electrode layers 131 and 136 may be formed in the gate regionsGR through the first trench portions T1″. For example, conductivematerials may be supplied through the first trench portions T1″ to fillthe adjacent gate regions GR.

Referring to FIGS. 1 and 10, the gate electrode layers 131 and 136 maybe partially etched. The gate electrode layers 131 and 136 in the firsttrench portions T1″ may be removed to form recess regions RS, and as aresult, gate electrodes GE may be formed. The formation of the recessregions RS may include performing an etch-back process on the gateelectrode layers 131 and 136. Upper portions of the gate electrodelayers 131 and 136 in the second trench portions T2″ (in particular, thegate regions GR) may be overlapped (e.g., covered) with the gateinsulating layer 120 and may not be etched during the etching process,and thus, the upper portions of the gate electrode layers 131 and 136may remain in the second trench portions T2″. The barrier electrodelayer 131 and the metal electrode layer 136 may be simultaneously etchedor may be sequentially etched by different etchants.

As a result of the local etching of the gate electrode layers 131 and136, each of the gate electrodes GE may include protruding portions PPthat are formed on a top surface thereof. Each of the gate electrodes GEmay include first electrode portions GE1 in the first trench portionsT1″ and second electrode portions GE2 in the second trench portions T2″.Top surfaces of the second electrode portions GE2 may be higher by aheight h than those of the first electrode portions GE1. In someembodiments, the height h may range from about 100 Å to about 500 Å.

Referring to FIGS. 1 and 11, capping insulating patterns 141 may beformed to fill the recess regions RS. The capping insulating patterns141 may not be formed in the second trench portions T2″ and may beformed in the first trench portions T1″. In other words, when viewed ina plan view, the capping insulating patterns 141 may not be formed onthe active regions AR and may be locally formed on the device isolationlayers 110.

As shown in FIG. 1, the capping insulating patterns 141 may includefirst capping insulating patterns 141 a, which are formed on the firstregions R1 where a distance between the active regions AR is relativelylarge, and second capping insulating patterns 141 b, which are formed onthe second regions R2 where the distance is relatively small. Whenmeasured in the first direction D1, widths of the first cappinginsulating patterns 141 a may be larger than those of the second cappinginsulating patterns 141 b.

The capping insulating patterns 141 may be formed of or include siliconnitride or silicon oxynitride. The formation of the capping insulatingpatterns 141 may include a chemical vapor deposition process.Thereafter, a planarization process may be performed to expose topsurfaces of the active regions AR. Gate line structures may be formed inan upper region of the substrate 100 (e.g., through steps/operations ofFIGS. 3 to 11). As an example, the gate line structures may include wordlines. For example, the metal electrode layer 136 in the gate regions GRmay provide word lines that are buried in the substrate 100.

Referring back to FIGS. 1 and 2, first impurity regions 171 and secondimpurity regions 172 may be formed in the active regions AR. Forexample, the first impurity regions 171 may be formed in both/opposingend portions of each of the active regions AR, and the second impurityregion 172 may be formed between a pair of the first impurity regions171. In some embodiments, the impurity regions 171 and 172 may be formedby injecting impurity ions, whose conductivity type is different fromthat of the substrate 100, into an upper portion of the substrate 100.Bottom surfaces of the impurity regions 171 and 172 may be lower thanthe top surfaces of the second electrode portions GE2 and may be higherthan the top surfaces of the first electrode portions GE1. The inventiveconcepts are not limited to a method of forming the impurity regions 171and 172 after forming the first and second gate electrode portions GE1,GE2. Rather, the impurity regions 171 and 172 may be formed at anystep/operation of FIGS. 3 to 11.

Bit lines BL and data storages DS may be formed on the resultingstructure provided with the gate line structures. The bit lines BL mayextend in the second direction D2 and may be connected to a plurality ofthe second impurity regions 172 through first contacts 161. The datastorages DS may be connected to the first impurity regions 171 throughsecond contacts 163. Each of the bit lines BL and the first and secondcontacts 161 and 163 may be formed of or include at least one of metals,conductive metal nitrides, or semiconductor materials.

In some embodiments, each of the data storages DS may be a capacitorincluding a lower electrode, a dielectric layer, and an upper electrode.Next, an interlayer insulating layer 195 may be formed to cover the datastorages DS. In some embodiments, the interlayer insulating layer 195may be formed of or include silicon oxide.

According to some embodiments of the inventive concepts, it may bepossible to secure a distance between the trenches TR, more specificallybetween upper portions of the trenches TR and increase a width of thegate electrode GE. In some devices where the width of a gate electrodeis increased, active regions between the gate electrodes may have areduced thickness, and in such cases, the active regions may be bentduring a fabrication process. According to some embodiments of theinventive concepts, however, due to the second expanded regions EN2, itmay be possible to secure the distance between the trenches TR and toincrease the width of the gate electrode (e.g., the second gateelectrode portions GE2), as shown in FIG. 7.

According to some embodiments of the inventive concepts, the protrudingportions PP may be formed without an additional photolithographyprocess. In other words, as described with reference to FIG. 10, duringthe etching process, upper portions of the gate electrode layers 131 and136 in the gate regions GR in the second trench portions T2″ may beprotected by the gate insulating layer 120, and thus, upper portions ofthe gate electrode layers 131 and 136 in the first trench portions T1″may be selectively removed during the etching process. Accordingly, itmay be possible to secure electric characteristics of a semiconductordevice and to simplify a process of fabricating a semiconductor device.

FIG. 12 is a sectional view illustrating a semiconductor memory deviceaccording to some embodiments of the inventive concepts. For concisedescription, a previously described element may be identified by asimilar or identical reference number without repeating an overlappingdescription thereof.

Referring to FIG. 12, a semiconductor memory device may be fabricated byprocesses of FIGS. 3 to 11, but without the process of FIG. 7. In otherwords, a semiconductor memory device according to some embodiments maybe fabricated without the anisotropic etching process on the firstexpanded regions EN1. As a result, the second electrode portions GE2 inthe first expanded regions EN1 may be formed to have a substantiallycircular section.

FIGS. 13 to 16 are sectional views illustrating a semiconductor memorydevice and a method of fabricating the same, according to someembodiments of the inventive concepts. For concise description, apreviously described element may be identified by a similar or identicalreference number without repeating an overlapping description thereof.

Referring to FIGS. 1 and 13, an etching process may be performed on theresulting structure described with reference to FIG. 10. As a result,the protruding portions PP described with reference to FIG. 10 may beremoved. Recess regions RS may be expanded to include first recessregions RS1 in the first trench portions T1″ and second recess regionsRS2 in the gate regions GR. Bottom surfaces of the first and secondrecess regions RS1 and RS2 may be positioned at substantially the sameheight, but the inventive concepts are not limited thereto. For example,due to the spatial limitation of the gate regions GR, the bottomsurfaces of the second recess regions RS2 may be formed at a levelhigher than the bottom surfaces of the first recess regions RS1. Theetching process may be a process that is different from the etchingprocess of FIG. 10, but in some embodiments, it may be a part of theetching process of FIG. 10 or may be continuously performed after theetching process of FIG. 10. As an example, the second recess regions RS2may be formed by a method of increasing a process time of the etchingprocess of FIG. 10 or a method of enhancing a cleaning process, which isperformed as a part of the etching process.

Referring to FIGS. 1 and 14, a semiconductor layer 138 may be formed tofill the first and second recess regions RS1 and RS2. The semiconductorlayer 138 may include a doped poly silicon layer. In some embodiments,the semiconductor layer 138 may be doped with n-type impurities in anin-situ manner. The semiconductor layer 138 may be formed by a chemicalvapor deposition process.

Referring to FIGS. 1 and 15, the semiconductor layer 138 may be removedfrom the first recess regions RS1 but may remain in the second recessregions RS2, thereby forming semiconductor patterns 139 in in the secondrecess regions RS2. An etch-back process may be performed to remove thesemiconductor layer 138 from the first recess regions RS1. Thesemiconductor layer 138 in the second recess regions RS2 may beprotected by the gate insulating layer 120 thereon and may not beremoved from the second recess regions RS2. In the gate region GR, thesemiconductor pattern 139 may be in contact with a top surface of themetal electrode layer 136. The semiconductor pattern 139, along with thebarrier electrode layer 131 and the metal electrode layer 136, mayconstitute second electrode portions GE2. By contrast, first electrodeportions GE1 may include the barrier electrode layer 131 and the metalelectrode layer 136, but not the semiconductor pattern 139.

Referring to FIGS. 1 and 16, capping insulating patterns 141 may beformed to fill the first recess regions RS1. Thereafter, first andsecond impurity regions 171 and 172 may be formed.

FIGS. 17 to 19 are sectional views illustrating a semiconductor memorydevice and a method of fabricating the same, according to someembodiments of the inventive concepts.

Referring to FIGS. 1 and 17, a work-function adjusting layer 151 and anupper metal electrode layer 152 may be formed on the resulting structuredescribed with reference to FIG. 13. The combination of thework-function adjusting layer 151 and the upper metal electrode layer152 may be formed of materials having a lower work-function than that ofthe combination of the barrier electrode layer 131 and the metalelectrode layer 136 (which may be referred to hereinafter as a lowermetal electrode layer). As an example, the work-function adjusting layer151 may include a work-function adjusting material. The work-functionadjusting material may include at least one of lanthanum (La), strontium(Sr), antimony (Sb), yttrium (Y), aluminum (Al), hafnium (Hf), oriridium (Ir).

The formation of the work-function adjusting layer 151 may includedepositing a plurality of layers and performing a thermal treatmentprocess thereon. For example, a lanthanum oxide layer and a titaniumnitride layer may be sequentially deposited in the recess regions RS,and then, an annealing process may be performed at a temperature rangingfrom about 500° C. to about 1000° C. In some embodiments, an interfacebetween the lanthanum oxide layer and the titanium nitride layer may bemaintained. On the other hand, in some embodiments, as a result ofcounter diffusion of materials, there may be no interface between thelanthanum oxide layer and the titanium nitride layer. The upper metalelectrode layer 152 may be formed of or include at least one of W, Ti,or Ta. For example, the upper metal electrode layer 152 may be formed ofor include the same material as the lower metal electrode layer 136.

Referring to FIGS. 1 and 18, upper portions of the work-functionadjusting layer 151 and the upper metal electrode layer 152 may beremoved. The removal of the upper portions of the work-functionadjusting layer 151 and the upper metal electrode layer 152 may includean etch-back process. The work-function adjusting layer 151 and theupper metal electrode layer 152 may be removed from the first recessregions RS1, whereas the work-function adjusting layer 151 and the uppermetal electrode layer 152 in the second recess regions RS2 may beoverlapped (e.g., covered) with the gate insulating layer 120 and thusmay not be removed. In some embodiments, the work-function adjustinglayer 151 and the upper metal electrode layer 152 may be completelyremoved from the first recess regions RS1. On the other hand, in someembodiments, a portion of them may remain in the first recess regionsRS1.

In the first recess regions RS1, the work-function adjusting layer 151may be provided to expose the upper metal electrode layer 152. Forexample, in the first recess regions RS1, the work-function adjustinglayer 151 may have a ‘U’-shaped section. By contrast, in the secondrecess regions RS2, the work-function adjusting layer 151 may beprovided to overlap (e.g., cover) a top surface of the upper metalelectrode layer 152. For example, in the second recess regions RS2, thework-function adjusting layer 151 may have a ring-shaped section. Thework-function adjusting layer 151 may include a portion that isinterposed between the upper metal electrode layer 152 and the lowermetal electrode layer 136.

As a result of the afore-described process, gate electrodes GE may beformed to include the barrier electrode layer 131, the lower metalelectrode layer 136, the work-function adjusting layer 151, and theupper metal electrode layer 152. The combination of the barrierelectrode layer 131 and the lower metal electrode layer 136 may be anelectrode portion having a relatively large work-function, and thecombination of the work-function adjusting layer 151 and the upper metalelectrode layer 152 may be an electrode portion having a relativelysmall work-function.

Referring to FIGS. 1 and 19, capping insulating patterns 141 may beformed to fill the first recess regions RS1. Thereafter, first andsecond impurity regions 171 and 172 may be formed.

FIGS. 20 to 22 are sectional views illustrating a semiconductor memorydevice and a method of fabricating the same, according to someembodiments of the inventive concepts.

Referring to FIGS. 1 and 20, a metal oxide 176 may be formed on theresulting structure described with reference to FIG. 10. The metal oxide176 may include a work-function adjusting material. The work-functionadjusting material may include at least one of lanthanum (La), strontium(Sr), antimony (Sb), yttrium (Y), aluminum (Al), hafnium (Hf), oriridium (Ir). The metal oxide 176 may be formed to fill at least aportion of the recess regions RS and to be in contact with the barrierelectrode layer 131 and the metal electrode layer 136.

Referring to FIGS. 1 and 21, a thermal treatment process may beperformed, and thus, the work-function adjusting material in the metaloxide 176 may be diffused into the barrier electrode layer 131. Thethermal treatment process may be performed at a temperature ranging fromabout 500° C. to about 1000° C. In the case where the metal oxide 176 islanthanum oxide, lanthanum in the metal oxide 176 may be diffused intoan upper portion of the barrier electrode layer 131 by the thermaltreatment process. A portion of the barrier electrode layer 131 may becombined with the diffused lanthanum to form a work-function adjustinglayer 153. In the case where the barrier electrode layer 131 is formedof titanium nitride, the work-function adjusting layer 153 may be atitanium-lanthanum nitride layer.

The work-function adjusting layer 153 may be locally formed on thebarrier electrode layer 131. That is, the work-function adjustingmaterial may be easily diffused into the barrier electrode layer 131 andmay not be diffused into the metal electrode layer 136. In someembodiments, the work-function adjusting material may be diffused intothe metal electrode layer 136 at a relatively low rate. Thework-function adjusting material may be horizontally diffused, and inthis case, the work-function adjusting layer 153 may also be formed inthe upper portions of the barrier electrode layer 131 in the gateregions GR. A depth of the work-function adjusting layer 153 (or aposition of a boundary between the work-function adjusting layer 153 andthe barrier electrode layer 131) may be determined by adjusting processparameters (e.g., temperature and/or time) of the thermal treatmentprocess.

Referring to FIGS. 1 and 22, after the thermal treatment process, themetal oxide 176 may be removed. Thereafter, capping insulating patterns141 may be formed to fill the recess regions RS.

According to some embodiments of the inventive concepts, it may bepossible to realize a semiconductor device with high integration densityand improved electric characteristics. In addition, it may be possibleto simplify a process of fabricating a semiconductor device.

The above-disclosed subject matter is to be considered illustrative, andnot restrictive, and the appended claims are intended to cover all suchmodifications, enhancements, and other embodiments, which fall withinthe true spirit and scope. Thus, to the maximum extent allowed by law,the scope is to be determined by the broadest permissible interpretationof the following claims and their equivalents, and shall not berestricted or limited by the foregoing detailed description.

What is claimed is:
 1. A semiconductor memory device comprising: asubstrate; a device isolation layer defining active regions of thesubstrate; and a gate line structure comprising a gate insulating layerand a gate electrode that are buried in a trench of the substrate tocross the active regions, wherein the trench comprises first trenchportions on the device isolation layer and second trench portions on theactive regions, and wherein, in the second trench portions, the gateinsulating layer covers and contacts a topmost surface of the gateelectrode.
 2. The semiconductor memory device of claim 1, wherein eachof the second trench portions comprises an upper trench comprising afirst width and a lower trench comprising a second width that is widerthan the first width.
 3. The semiconductor memory device of claim 2,wherein, in the second trench portions, the gate electrode is in thelower trench and the gate insulating layer encloses the gate electrode.4. The semiconductor memory device of claim 3, wherein the gateinsulating layer is in the upper trench and the upper trench is free ofthe gate electrode.
 5. The semiconductor memory device of claim 1,wherein the gate line structure further comprises capping insulatingpatterns in the first trench portions on the topmost surface of the gateelectrode, and wherein the gate electrode protrudes toward a top surfaceof the substrate, between the capping insulating patterns.
 6. Thesemiconductor memory device of claim 1, further comprising a spacer onan outer side surface of the gate insulating layer, wherein, in thefirst trench portions, the spacer is horizontally spaced apart from thegate electrode by the gate insulating layer, and wherein, in the secondtrench portions, a bottom surface of the spacer is vertically spacedapart from the topmost surface of the gate electrode by the gateinsulating layer.
 7. The semiconductor memory device of claim 1, whereinthe gate electrode comprises first electrode portions in the firsttrench portions and second electrode portions in the second trenchportions, and wherein top surfaces of the second electrode portions arelocated at a level closer than top surfaces of the first electrodeportions to a top surface of the substrate.
 8. The semiconductor memorydevice of claim 7, wherein the top surfaces of the second electrodeportions comprise rounded surfaces, respectively.
 9. The semiconductormemory device of claim 7, wherein the second electrode portions arewider than the first electrode portions.
 10. The semiconductor memorydevice of claim 7, wherein the second electrode portions compriseprotruding portions that protrude toward the top surface of thesubstrate.
 11. A semiconductor memory device comprising: a substrate; adevice isolation layer defining active regions of the substrate; and agate line structure buried in a trench in the substrate to cross theactive regions, wherein the gate line structure comprises a gateinsulating layer and a gate electrode in the trench, wherein the gateelectrode comprises first electrode portions on the device isolationlayer and second electrode portions on the active regions, wherein thefirst electrode portions are outside of the active regions, and whereinrespective widest widths of the second electrode portions are wider, ina direction, than respective widest widths of the first electrodeportions.
 12. The semiconductor memory device of claim 11, wherein thetrench comprises first trench portions on the device isolation layer andsecond trench portions on the active regions, and wherein the gateinsulating layer is in upper portions of the second trench portions. 13.The semiconductor memory device of claim 12, wherein each of the secondtrench portions comprises an upper trench and a lower trench that iswider, in the direction, than the upper trench, and wherein the gateinsulating layer is in the upper trench and the upper trench is free ofthe gate electrode.
 14. A semiconductor memory device comprising: asubstrate comprising first and second trenches therein; an isolationlayer below the first trench; a first gate electrode portion in thefirst trench; and a second gate electrode portion in the second trench,wherein the second gate electrode portion is wider, in a direction, thanthe first gate electrode portion, and wherein an upper region of thesecond trench is spaced apart from the first trench by a greaterdistance, in the direction, than a lower region of the second trench.15. The semiconductor memory device of claim 14, further comprising animpurity region in the substrate between the first trench and the upperregion of the second trench, wherein a first vertical level of anuppermost surface of the second gate electrode portion is higher than asecond vertical level of an uppermost surface of the first gateelectrode portion, and wherein the second vertical level of theuppermost surface of the first gate electrode portion is lower than athird vertical level of a lower portion of the impurity region.
 16. Thesemiconductor memory device of claim 14, further comprising a gateinsulating layer in the first and second trenches, wherein the gateinsulating layer is on an uppermost surface of the second gate electrodeportion.
 17. The semiconductor memory device of claim 14, wherein thelower region of the second trench comprises an expanded region of thesecond trench that is wider, in the direction, than the upper region ofthe second trench, and wherein the second gate electrode portioncomprises a word line in the expanded region of the second trench. 18.The semiconductor memory device of claim 14, further comprising a bitline on the substrate, wherein a first vertical level of an uppermostsurface of the second gate electrode portion is closer than a secondvertical level of an uppermost surface of the first gate electrodeportion to a third vertical level of the bit line.
 19. The semiconductormemory device of claim 18, wherein the second gate electrode portion isin the lower region of the second trench, and wherein the upper regionof the second trench is between the uppermost surface of the second gateelectrode portion and the third vertical level of the bit line.
 20. Thesemiconductor memory device of claim 1, wherein the gate electrodecomprises a barrier electrode layer and a metal electrode layer, whereinthe barrier electrode layer covers a top surface of the metal electrodelayer, and wherein the gate insulating layer contacts a topmost surfaceof the barrier electrode layer.